? semiconductor components industries, llc, 2014 may, 2014 ? rev. 1 1 publication order number: mbr2045emfs/d mbr2045emfs, nrvb2045emfs switch-mode power rectifiers these state?of?the?art devices have the following features: features ? low power loss / high efficiency ? new package provides capability of inspection and probe after board mounting ? guardring for stress protection ? low forward voltage drop ? 150 c operating junction temperature ? wettable flacks option available ? nrv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these are pb?free and halide?free devices mechanical characteristics: ? case: epoxy, molded ? epoxy meets flammability rating ul 94?0 @ 0.125 in. ? lead finish: 100% matte sn (tin) ? lead and mounting surface temperature for soldering purposes: 260 c max. for 10 seconds ? device meets msl 1 requirements applications ? excellent alternative to dpak in space?constrained automotive applications ? output rectification in compact portable consumer applications ? freewheeling diode used with inductive loads device package shipping ? ordering information mbr2045emfst1g so?8 fl (pb?free) 1500 / tape & reel schottky barrier rectifiers 20 amperes 45 volts http://onsemi.com 1,2,3 5,6 so?8 fla t lead case 488aa style 2 b2045e = specific device code a = assembly location y = year w = work week zz = lot traceability marking diagram b2045e aywzz a a a not used c c 1 ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. mbr2045emfst3g s o?8 fl (pb?free) 5000 / tape & reel nrvb2045emfst1g s o?8 fl (pb?free) 1500 / tape & reel NRVB2045EMFST3G s o?8 fl (pb?free) 5000 / tape & reel
mbr2045emfs, nrvb2045emfs http://onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 45 v average rectified forward current (rated v r , t c = 130 c) i f(av) 20 a peak repetitive forward current, (rated v r , square wave, 20 khz, t c = 120 c) i frm 40 a non?repetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 400 a storage temperature range t stg ?65 to +175 c operating junction temperature t j ?55 to +150 c unclamped inductive switching energy (10 mh inductor, non?repetitive) e as 150 mj esd rating (human body model) 3b esd rating (machine model) m4 stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. note: the heat generated must be less than the thermal conductivity from junction?to?ambient: dpd/dtj < 1/rja thermal characteristics characteristic symbol typ max unit thermal resistance, junction?to?case, steady state (assumes 600 mm 2 1 oz. copper bond pad, on a fr4 board) r jc ? 1.6 c/w electrical characteristics instantaneous forward voltage (note 1) (i f = 10 a, t j = 125 c) (i f = 10 a, t j = 25 c) (i f = 20 a, t j = 125 c) (i f = 20 a, t j = 25 c) v f 0.35 0.45 0.43 0.51 0.47 0.56 0.58 0.64 v instantaneous reverse current (note 1) (rated dc voltage, t j = 125 c) (rated dc voltage, t j = 25 c) i r 48 0.09 100 0.40 ma product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 1. pulse test: pulse width = 300 s, duty cycle 2.0%.
mbr2045emfs, nrvb2045emfs http://onsemi.com 3 typical characteristics 0.10 1.00 10.00 100.00 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.800.90 figure 1. typical instantaneous forward voltage figure 2. maximum instantaneous forward voltage v f , instantaneous forward voltage (v) v f , instantaneous forward voltage (v) t a = 150 c 125 c 25 c t a = 150 c 125 c 25 c i f , instantaneous forward current (a) 0.10 1.00 10.00 100.00 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 ?40 c ?40 c i f , instantaneous forward current (a) 1.e?10 1.e?09 1.e?08 1.e?07 1.e?06 1.e?05 1.e?04 1.e?03 1.e?02 1.e?01 1.e+00 0 10203040 figure 3. typical reverse characteristics v r , instantaneous reverse voltage (v) i r , instantaneous reverse current (a) t a = 150 c t a = 125 c t a = 25 c t a = ?40 c 0 10203040 1.e?10 1.e?09 1.e?08 1.e?07 1.e?06 1.e?05 1.e?04 1.e?03 1.e?02 1.e?01 1.e+00 figure 4. maximum reverse characteristics v r , instantaneous reverse voltage (v) i r , instantaneous reverse current (a) t a = 150 c t a = 125 c t a = 25 c t a = ?40 c 10 100 1,000 10,000 0 10203040 45 5152535 figure 5. typical junction capacitance v r , reverse voltage (v) c, junction capacitance (pf) t j = 25 c 0 5 10 15 20 25 30 35 40 45 50 55 60 0 20 40 60 80 100 120 140 160 figure 6. current derating t c , case temperature ( c) i f(av) , average forward current (a) r jc = 1.6 c/w dc square wave
mbr2045emfs, nrvb2045emfs http://onsemi.com 4 typical characteristics 0 1 2 3 4 5 6 7 8 01234 figure 7. forward power dissipation i f(av) , average forward current (a) i apk /i av = 20 p f(av) , average forward power dissipation (w) i apk /i av = 10 i apk /i av = 5 square wave dc 0.001 0.01 0.1 1 10 100 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 figure 8. thermal response pulse time (sec) r(t) ( c/w) 10% duty cycle = 50% 20% 5% 2% 1% single pulse assumes 25 c ambient and soldered to a 600 mm 2 ? oz copper pad on pcb
mbr2045emfs, nrvb2045emfs http://onsemi.com 5 package dimensions m 3.00 3.40 0 ??? 3.80 12 dfn5 5x6, 1.27p (so?8fl) case 488aa issue h notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeter. 3. dimension d1 and e1 do not include mold flash protrusions or gate burrs. 1234 top view side view bottom view d1 e1 d e 2 2 b a 0.20 c 0.20 c 2 x 2 x dim min nom millimeters a 0.90 1.00 a1 0.00 ??? b 0.33 0.41 c 0.23 0.28 d 5.15 bsc d1 4.70 4.90 d2 3.80 4.00 e 6.15 bsc e1 5.70 5.90 e2 3.45 3.65 e 1.27 bsc g 0.51 0.61 k 1.20 1.35 l 0.51 0.61 l1 0.05 0.17 a 0.10 c 0.10 c detail a 14 l1 e/2 8x d2 g e2 k b a 0.10 b c 0.05 c l detail a a1 e 3 x c 4 x c seating plane max 1.10 0.05 0.51 0.33 5.10 4.20 6.10 3.85 0.71 1.50 0.71 0.20 m *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 1.270 2x 0.750 1.000 0.905 0.475 4.530 1.530 4.560 0.495 3.200 1.330 0.965 2x 2x 3x 4x 4x pin 5 (exposed pad) style 2: pin 1. anode 2. anode 3. anode 4. no connect 5. cathode on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 mbr2045emfs/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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